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NTD4960N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(ON)
7.0
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 11.5 V, V DS = 15 V,
I D = 15 A, R G = 3.0 W
17
22
3.0
ns
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 30 A
T J = 25 ° C
T J = 125 ° C
0.9
0.76
1.2
V
Reverse Recovery Time
t RR
13.0
Charge Time
Discharge Time
Reverse Recovery Charge
t a
t b
Q RR
V GS = 0 V, dIS/dt = 100 A/ m s,
I S = 30 A
7.0
6.0
4.0
ns
nC
PACKAGE PARASITIC VALUES
Source Inductance (Note 5)
Drain Inductance, DPAK
L S
L D
2.49
0.0164
nH
Drain Inductance, IPAK (Note 5)
Gate Inductance (Note 5)
L D
L G
T A = 25 ° C
1.88
3.46
Gate Resistance
R G
1.0
W
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
5. Assume terminal length of 110 mils.
ORDERING INFORMATION
NTD4960NT4G
NTD4960N ? 1G
NTD4960N ? 35G
Device
Package
DPAK
(Pb ? Free)
IPAK
(Pb ? Free)
IPAK Trimmed Lead
(Pb ? Free)
Shipping ?
2500 / Tape & Reel
75 Units / Rail
75 Units / Rail
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
3
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